METHOD OF DRY ETCHING, METHOD OF MICROSTRUCTURE FORMATION, MOLD AND PROCESS FOR PRODUCING THE SAME
摘要
<p>WC substrate (7) is etched with the use of plasma (50) produced from a mixed gas consisting of a gas containing halogen atoms and a gas containing nitrogen atoms.</p>
申请公布号
WO2007094087(A1)
申请公布日期
2007.08.23
申请号
WO2006JP310215
申请日期
2006.05.23
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAKAGAWA, HIDEO;SASAGO, MASARU;MURAKAMI, TOMOYASU
