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发明名称
Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum
摘要
申请公布号
DE10204868(B4)
申请公布日期
2007.08.23
申请号
DE20021004868
申请日期
2002.02.06
申请人
INFINEON TECHNOLOGIES AG
发明人
DEPPE, JOACHIM;LUDWIG, CHRISTOPH;KLEINT, CHRISTOPH
分类号
H01L21/8247;H01L27/115;H01L21/28;H01L29/423;H01L29/788;H01L29/792
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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