| 摘要 |
<p>A solid state imaging device has a substrate (1) in which are formed a pixel array portion (10) having a plurality of pixels, and a peripheral circuitry portion (12). A first multilevel metallization structure (20, 22) is formed over the peripheral circuitry portion (12), and a second multilevel metallization structure (22) thinner than the first multilevel metallization structure is formed over the pixel array portion (10). This permits a sufficient number of metallization levels to be provided without obscuring the pixel array.</p> |
