| 摘要 |
<p>A semiconductor having a solder bump with a suppressed growth of an inter-metallic compound and a manufacturing method thereof are provided to flow a material of a penetrated layer into a solder bump and to suppress growth of the inter-metallic compound by forming the solder bump over the penetrated layer. Metallic adhesive layers(220,230) are formed on an electrode pad(110) of a semiconductor chip(100). An interlayer isolating layer(240) is formed over the metallic adhesive layers. A penetrated layer(250) is formed over the interlayer isolating layer so as to be penetrated into a solder bump(300). The solder bump is formed over the penetrated layer. The penetrated layer is made of one out of Cu, Cu-alloy, Sb, Sb-alloy, In, In-alloy, Sn, Sn-alloy, Bi, Bi-alloy, Pt-alloy, Au, and Au-alloy. The interlayer isolating layer is made of one out of Ni, Ni-alloy, Pd, and Pd-alloy.</p> |
