| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory which prevents power consumption from increasing due to a through current at a data determination part connected to a main bit line. <P>SOLUTION: The semiconductor memory is provided with; a memory cell 13 connected to a bit line BL; a discharge circuit 14 which discharges the bit line BL; a precharge circuit 16 which precharges a main bit line MBL and the bit line BL; a column selector 15 which connects the main bit line MBL with the bit line BL when a reading operation is made and when a precharging operation is made; a data determination part 18 which determines cell information read out to the main bit line; an output latch circuit 17 which latches and outputs output signals from the data determination part 18; and a clamp circuit 24 which clamps the main bit line MBL to a power supply voltage when the bit line BL is discharged. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
