| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase joint strength and keep a resistance component low enough when joining a conductive substrate to a lamination prepared by forming a GaN-based semiconductor to a substrate and then removing the substrate at the side of the lamination to manufacture a GaN-based semiconductor light emitting element. <P>SOLUTION: A GaN-based semiconductor light emitting element 1 which has layers of GaN-based semiconductor, and in which respective layers 12 composed of GaN-based semiconductor of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are laminated in sequence has a lamination 10A at its top layer that has a first joint layer 14 composed of metal and a second joint layer 33 that is formed on a conductive substrate 31 whose face opposite to the side where the conductive substrate 31 is formed is joined to the first joint layer 14, which is essentially composed of the same material as the first joint layer 14, and whose crystal orientations in a joint surface direct direction are mutually the same. <P>COPYRIGHT: (C)2007,JPO&INPIT |
