| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser annealing method and a laser annealer where isotropic and uniform crystal grains can be obtained while using a solid laser advantageous on the aspect of costs and that of maintenance, and where throughput is improved. SOLUTION: Energy distribution of the direction of the short axis of a rectangular beam is equalized with which an amorphous semiconductor film (amorphous silicon etc.) is irradiated. The energy distribution of the direction of the short axis of the rectangular beam can be equalized by a cylindrical lens array 26 or a waveguide 36, and condensing optical systems 28 and 44, or an optical system including a diffraction optical system. An effective energy range is expanded with which the amorphous semiconductor film is irradiated, and a carrying speed of a substrate 3 is improved for the portion of it, so that the throughput of laser annealing is improved. COPYRIGHT: (C)2007,JPO&INPIT |
