| 摘要 |
PROBLEM TO BE SOLVED: To reduce the adhesion of a silicon wafer to a holder for supporting a silicon wafer. SOLUTION: An epitaxial growing apparatus 100 is configured by housing a silicon wafer 101 placed on a holder 110 in a chamber 120, and connecting a channel 122 for supplying gas for forming a film and a channel 124 for discharging gas to the chamber 120. The holder 110 is provided with a plurality of projections 112 for constraining the movement in the same direction as the surface of the silicon wafer 101 with respect to the silicon wafer 101, and the silicon wafer 101 is supported on the surface to come in contact with the back face of the silicon wafer 101. COPYRIGHT: (C)2007,JPO&INPIT |
