发明名称 |
Copper film deposition method |
摘要 |
A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H<SUB>2 </SUB>is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.
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申请公布号 |
US2007197398(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20050591476 |
申请日期 |
2005.02.25 |
申请人 |
KOJIMA YASUHIKO;YOSHII NAOKI |
发明人 |
KOJIMA YASUHIKO;YOSHII NAOKI |
分类号 |
C23C16/18;H01L39/24;C23C16/452;C23C16/455;H01L21/285 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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