发明名称 |
MULTI-PORT SEMICONDUCTOR MEMORY DEVICE AND SIGNAL INPUT/OUTPUT METHOD THEREFOR |
摘要 |
A multi-port semiconductor memory device and a signal input/output method therefore are provided. In one embodiment, the multi-port semiconductor memory device includes a plurality of different input/output ports and a memory array. The memory array has at least one memory region that is accessed by using different input/output ports. The different input/output ports include a first input/output port through which a first signal is input/output and a second input/output port through which a second signal different from the first signal is input/output. The memory region is divided into a plurality of memory regions. The invention provides effects of reducing the number of test pins and improving test efficiency.
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申请公布号 |
US2007195633(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20060466415 |
申请日期 |
2006.08.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN HYO-JOO;KIM NAM-JONG |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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