发明名称 MULTI-PORT SEMICONDUCTOR MEMORY DEVICE AND SIGNAL INPUT/OUTPUT METHOD THEREFOR
摘要 A multi-port semiconductor memory device and a signal input/output method therefore are provided. In one embodiment, the multi-port semiconductor memory device includes a plurality of different input/output ports and a memory array. The memory array has at least one memory region that is accessed by using different input/output ports. The different input/output ports include a first input/output port through which a first signal is input/output and a second input/output port through which a second signal different from the first signal is input/output. The memory region is divided into a plurality of memory regions. The invention provides effects of reducing the number of test pins and improving test efficiency.
申请公布号 US2007195633(A1) 申请公布日期 2007.08.23
申请号 US20060466415 申请日期 2006.08.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN HYO-JOO;KIM NAM-JONG
分类号 G11C8/00 主分类号 G11C8/00
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