| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode which has two electrodes on a plane opposite from the light extraction plane and has high light extraction efficiency and high luminance. <P>SOLUTION: The light-emitting diode includes a light-emitting layer including a light emitting layer expressed by composition Formula (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>Y</SB>In<SB>1-Y</SB>P (0≤X≤1, 0<Y≤1), and has such a structure that a compound semiconductor layer including the light-emitting layer is joined to a transparent substrate. The light-emitting diode is formed with a first electrode and a second electrode, having different polarity from that of the first electrode on the plane opposite from the primary light extraction plane, and the first electrode-side surface is formed with a reflection metal film. The second electrode is formed on the compound semiconductor layer exposed on the side opposite to the first electrode. The side face of the transparent substrate consists of two parts: a first side face which is closer to the light emitting layer and is nearly perpendicular to the light-emitting plane of the light-emitting layer; and a second side face which is away from the light-emitting layer and is inclined with respect to the light emitting plane. <P>COPYRIGHT: (C)2007,JPO&INPIT |
