发明名称 |
METHOD FOR DETECTING HIGH IMPEDANCE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for detecting high impedance capable of detecting a through-current in a simulation circuit without modifying the simulation circuit during simulations of an analog circuit including transistors. SOLUTION: The method includes a process for analyzing whether or not the condition for entering a high-impedance state exists for all nodes in the circuit. Also, the method includes a process for analyzing whether or not the condition for a through-current generated due to the high-impedance state exists for all the nodes in the circuit. The method also includes a process for detecting whether or not the condition for entering the high-impedance state and the condition for a through-current generated due to the high-impedance state will be met during execution of the simulations. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007213456(A) |
申请公布日期 |
2007.08.23 |
申请号 |
JP20060034617 |
申请日期 |
2006.02.13 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NARAHARA HIDETOSHI |
分类号 |
G06F17/50;G01R31/28;H01L21/00;H01L21/82;H01L21/8234;H01L27/088;H03K17/16;H03K17/687;H03K19/00 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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