发明名称 METHOD FOR DETECTING HIGH IMPEDANCE
摘要 PROBLEM TO BE SOLVED: To provide a method for detecting high impedance capable of detecting a through-current in a simulation circuit without modifying the simulation circuit during simulations of an analog circuit including transistors. SOLUTION: The method includes a process for analyzing whether or not the condition for entering a high-impedance state exists for all nodes in the circuit. Also, the method includes a process for analyzing whether or not the condition for a through-current generated due to the high-impedance state exists for all the nodes in the circuit. The method also includes a process for detecting whether or not the condition for entering the high-impedance state and the condition for a through-current generated due to the high-impedance state will be met during execution of the simulations. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007213456(A) 申请公布日期 2007.08.23
申请号 JP20060034617 申请日期 2006.02.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NARAHARA HIDETOSHI
分类号 G06F17/50;G01R31/28;H01L21/00;H01L21/82;H01L21/8234;H01L27/088;H03K17/16;H03K17/687;H03K19/00 主分类号 G06F17/50
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