发明名称 Organic thin-film transistor and fabrication method thereof and organic thin-film device
摘要 An organic thin-film transistor having a higher carrier-mobility, a method of fabricating the organic thin-film transistor and an organic thin-film device including the organic thin-film transistor are provided. In an organic thin-film transistor having an organic semiconductor layer, the organic semiconductor layer contains a fluorinated acene compound which is represented by a formula of C<SUB>4n+2</SUB>F<SUB>2n+4</SUB>, wherein n is an integer of 2 or greater. The fluorinated acene compound is preferably tetradecafluoropentacene or dodecafluoronaphthacene.
申请公布号 US2007194302(A1) 申请公布日期 2007.08.23
申请号 US20050589800 申请日期 2005.02.17
申请人 INOUE YOUJI;TOKITO SHIZUO;KOBAYASHI MASAFUMI;GAO YUAN 发明人 INOUE YOUJI;TOKITO SHIZUO;KOBAYASHI MASAFUMI;GAO YUAN
分类号 H01L29/08;H01L51/05;H01L21/336;H01L21/363;H01L29/786;H01L51/30 主分类号 H01L29/08
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