| 摘要 |
<p>The invention relates to an interconnect structure and method of its manufacture. Interconnects (38) extend longitudinally, and bars (30) of conventional dielectric extend across the interconnects (38). The remainder of the space between the interconnects (38) is of low-k material. The use of bars (30) provides strength and support for the structure and overlying layers, allowing the use of weak low-k material. In a method of manufacture, the bars (30) are formed first, the regions (34) of low-k material formed between the bars, and then the interconnects (39) formed in trenches etched through the bars (30) and regions (34) of low-k material.</p> |
