发明名称 BIMORPH ELEMENT, BIMORPH SWITCH, MIRROR ELEMENT, AND METHOD FOR MANUFACTURING THESE
摘要 There is provided a bimorph element including a silicon oxide layer, a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer, and a deformation preventing film that covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time. The deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer. The deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer. The deformation preventing film is a silicon nitride film or a metallic film.
申请公布号 US2007194656(A1) 申请公布日期 2007.08.23
申请号 US20070681038 申请日期 2007.03.01
申请人 ADVANTEST CORPORATION 发明人 TAKAYANAGI FUMIKAZU;SANPEI HIROKAZU
分类号 H01H61/00;F01B29/10;H01L29/84;H02N10/00 主分类号 H01H61/00
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