发明名称 |
BIMORPH ELEMENT, BIMORPH SWITCH, MIRROR ELEMENT, AND METHOD FOR MANUFACTURING THESE |
摘要 |
There is provided a bimorph element including a silicon oxide layer, a high expansion coefficient layer that is formed on the silicon oxide layer and has a thermal expansion coefficient higher than a thermal expansion coefficient of the silicon oxide layer, and a deformation preventing film that covers a surface of the silicon oxide layer and prevents the silicon oxide layer from being deformed over time. The deformation preventing film has a transmission factor of moisture and oxygen lower than that of the silicon oxide layer. The deformation preventing film is a silicon oxide film that is formed with energy higher than that used in a case that forms the silicon oxide layer. The deformation preventing film is a silicon nitride film or a metallic film.
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申请公布号 |
US2007194656(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20070681038 |
申请日期 |
2007.03.01 |
申请人 |
ADVANTEST CORPORATION |
发明人 |
TAKAYANAGI FUMIKAZU;SANPEI HIROKAZU |
分类号 |
H01H61/00;F01B29/10;H01L29/84;H02N10/00 |
主分类号 |
H01H61/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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