| 摘要 |
A method for fabricating a semiconductor device is provided to enable formation of a very small STI while controlling influence upon a device characteristic by overcoming a problem arising form enlargement of a transformation difference of a device region or a deterioration of the reliability of a previous gate formation device when a buried insulation layer with fluidity is filled in the STI. An isolation groove(105) is formed in a semiconductor substrate(101). A buried insulation layer is filled in the isolation groove, made of a single layer or a plurality of insulation layers. An annealing process is performed on the buried insulation layer at a temperature of 300~699 °C in an atmosphere of inert gas. An annealing process can be continuously performed on the buried insulation layer at a temperature of 700 °C in an atmosphere of vacuum or inert gas.
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