| 摘要 |
The present invention provides a bi-directional field effect transistor and a matrix converter using the same, in which a current flowing bi-directionally can be controlled by means of a single device. The bi-directional field effect transistor includes: a semiconductor substrate 1; a gate region which is arranged on the semiconductor substrate 1, with a channel parallel to a principal surface of the substrate 1 and a gate electrode 13a for controlling conductance of the channel; a first region which is arranged on a first side of the channel; and a second region which is arranged on a second side of the channel; wherein a forward current which flows from a first electrode 11a of the first region through the channel to a second electrode 12a of the second region and a backward current which flows from the second electrode 12a through the channel to the first electrode 11a can be controlled by a gate voltage applied to the gate electrode 13a.
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