| 摘要 |
<p>The present invention provides a magnetron co-sputtering device (6) comprising a main magnetron cathode (x) and a secondary cathode (Y) adapted to be associated with each other to sputter deposit a material on a substrate (2) arranged at a substrate position, the material comprising a first material derived from the main cathode (X) and a second material derived from the secondary cathode (Y), wherein the secondary cathode (Y) is arranged between the main cathode (X) and the substrate position, at a position selected from: (i) a position within a magnetic field derived from a main cathode (X) magnetic source, and (ii) a position within the footprint (6) of the main cathode (X).</p> |
