发明名称 |
SEMICONDUCTOR DEVICE AND MODULE USING THE SAME |
摘要 |
A semiconductor device according to this invention includes: two level shift switches (28A and 28B) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section (28a,28b) which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode (23) having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor. |
申请公布号 |
EP1734647(A4) |
申请公布日期 |
2007.08.22 |
申请号 |
EP20050775056 |
申请日期 |
2005.08.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITABATAKE, MAKOTO;KUSUMOTO, OSAMU;UCHIDA, MASAO;TAKAHASHI, KUNIMASA;YAMASHITA, KENYA;MIYANAGA, RYOKO;HASHIMOTO, KOICHI |
分类号 |
H02M7/538;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/095;H03K17/06 |
主分类号 |
H02M7/538 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|