| 摘要 |
A capacitor is provided to obtain larger capacitance than that of a capacitor using a hafnium oxide layer or a tantalum oxide layer as a dielectric layer by depositing as a charge storage node a metallic material like TiN or Ru and by using a dielectric layer of a capacitor a TiLaO(permittivity=30-60) thin film having a greater dielectric constant than that of a hafnium oxide layer or a tantalum oxide layer. A lower electrode(41) is formed. A titanium source supply process, a purge process, a niobium source supply process, a purge process, a reaction gas supply process and a purge process constitute a single cycle, and the single cycle is performed a predetermined number of times to form a dielectric layer(42) on the lower electrode. An upper electrode(43) is formed on the dielectric layer. In the titanium source, an organic metal compound containing Ti[OCH(CH3)2]4 or Ti is used as a precursor and a titanium source has a flowrate of 50~500 sccm.
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