| 摘要 |
A method for manufacturing a semiconductor device is provided to increase an interval between bit lines in a region except for a bit line contact hole region and to reduce an intersection area between the bit line and a word line by forming the bit line locally having a large width in the bit line contact hole region. Landing plugs(330a,330b) for a bit line contact are formed on a semiconductor substrate(300). An interlayer dielectric is formed on the semiconductor substrate. The interlayer dielectric is etched to form a contact hole(H) exposing the landing plugs for the bit line contact. A bit line(BL) is formed on the interlayer dielectric as gap-filling the contact hole. The bit line locally has a large width in the contact hole region. The bit line is formed to be protruded to at least one direction according to a width direction in the contact hole region.
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