发明名称 |
Semiconductor device and method of making the same |
摘要 |
A semiconductor device comprises a substrate, a gate disposed on the substrate, and a source and drain formed in the substrate on both sides of the gate. The device further comprises a thin spacer having a first layer and a second layer formed on the sidewalls of the gate, wherein the first and second layers have comparable wet etch rates of at least 10 Å per minute using the same etchant.
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申请公布号 |
US7259050(B2) |
申请公布日期 |
2007.08.21 |
申请号 |
US20040834474 |
申请日期 |
2004.04.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIEN-HAO;CHEN CHIA-LIN;LEE TZE LIANG;CHEN SHIH-CHANG;HSU JU-WANG |
分类号 |
H01L21/338;H01L21/336;H01L21/76;H01L29/745;H01L29/76;H01L29/78 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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