| 摘要 |
A LED having a vertical structure and its manufacturing method are provided to increase a luminous efficiency and light extracting effect by using getter metal which causes a TCO layer and a GaN semiconductor layer to be in Ohmic contact. A first electrode(30) is formed on one surface of semiconductor layers(20), and nitrogen getter metal layer(50) is formed on the other surface of the semiconductor layers. A TCO(Transparent Conductive Oxide) layer(50) is positioned adjacent to the getter metal layer. A second electrode(70) is formed adjacent to the TCO layer. The semiconductor layers have a p-type semiconductor layer, an active layer positioned on the p-type semiconductor layer, and an n-type semiconductor layer positioned on the active layer.
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