发明名称 |
LED HAVING VERTICAL STRUCTURE AND THE METHOD OF MANUFACTURING THE SAME |
摘要 |
A LED having a vertical structure and its manufacturing method are provided to increase a luminous efficiency and light extracting effect by forming a TCO layer on a GaN semiconductor layer. A LED(20) having first and second surfaces consists plural semiconductor layers. A first electrode(30) is formed on the first surface of the light emitting layer, and a TCO(Transparent Conductive Oxide) layer(50) is positioned on the second surface of the light emitting layer. A second electrode(60) is formed to contact the TCO layer. The semiconductor layers have a p-type semiconductor layer(23), an active layer(22) positioned on the p-type semiconductor layer, and an n-type semiconductor layer(21) positioned on the active layer.
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申请公布号 |
KR20070082338(A) |
申请公布日期 |
2007.08.21 |
申请号 |
KR20060015037 |
申请日期 |
2006.02.16 |
申请人 |
LG ELECTRONICS INC.;LG INNOTEK CO., LTD. |
发明人 |
HA, JUN SEOK;JANG, JUN HO |
分类号 |
H01L33/42 |
主分类号 |
H01L33/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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