| 摘要 |
The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixels 100 each including a photoelectric conversion region 101 for generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portion 102 for accumulating a carrier overflowing from the photoelectric conversion region 101 in a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region 101 , wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon film 118 constituting the first electroconductive film of the carrier accumulating portion 102.
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