| 摘要 |
The manufacturing stability can be improved while effectively inhibiting the short-channel effect in the transistor according to the present invention. A halo impurity having a conductivity type opposite to a first conductivity type of a first impurity is ion-implanted into the silicon substrate 101 , and thereafter the first impurity having the first conductivity type, is ion-implanted and then a flash lamp annealing is conducted to form a p-type halo region 113 and a n-type extension region 111 . Then, the second impurity having the first conductivity type is ion-implanted into the silicon substrate 101 , and then a flash lamp annealing is conducted to form a n-type source/drain region 109 . Then, the impurity contained in the silicon substrate 101 is activated via spike RTA.
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