发明名称 |
Method for forming aluminum interconnect |
摘要 |
A method for forming an Al interconnect is disclosed. A disclosed method comprises: depositing a Ti layer on a substrate having predetermined devices; depositing a TiN layer on the entire surface of the Ti layer by performing a CVD process; performing a plasma treatment for the TiN layer; depositing an Al layer on the TiN layer; and forming an ARC on the entire surface of the Al layer.
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申请公布号 |
US7259096(B2) |
申请公布日期 |
2007.08.21 |
申请号 |
US20040026918 |
申请日期 |
2004.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG JOO |
分类号 |
H01L21/44;H01L21/3205;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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