| 摘要 |
<p>A quantum dot electroluminescence device and a method for manufacturing the same are provided to perform a wet-type film forming process after forming a quantum dot light-emitting layer by securing chemical and mechanical stabilities of a quantum dot thin film through a cross-link agent process. A quantum dot electroluminescence device includes an insulation substrate(110), a quantum dot light-emitting layer(150), an anode electrode(120), a cathode electrode(180), a hole transport layer(130), and an electron transport layer(170). The quantum dot light-emitting layer(150) is supported by the insulation substrate(110), and has a single layer or a multi-layer of quantum dots which are cross-linked by a cross-link agent. The anode electrode(120) and the cathode electrode(180) are connected to an external power to inject a carrier into the quantum dot light-emitting layer(150). The hole transport layer(130) is installed between the anode electrode(120) and the quantum dot light-emitting layer(150), and is made of a p-type polymer semiconductor. The electron transport layer(170) is installed between the cathode electrode(180) and the quantum dot light-emitting layer(180), and is made of metal oxide or an n-type polymer semiconductor.</p> |
