发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor device that suppresses emergence of a waste in an isolation trench formation process is to be provided. The method comprises forming an isolation trench having a predetermined depth from a surface of a semiconductor substrate; forming a dielectric layer on the surface of the semiconductor substrate including the isolation trench; filling the isolation trench with a CVD layer; removing the dielectric layer except a portion in the isolation trench by an etching; sequentially forming an insulating layer and a conductive layer; forming a resist defining a pattern which covers via the conductive layer a portion of the insulating layer in contact with the dielectric layer; and performing an anisotropic etching on the resist to thereby remove a portion of the conductive layer exposing a surface thereof.
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申请公布号 |
US7259073(B2) |
申请公布日期 |
2007.08.21 |
申请号 |
US20040983672 |
申请日期 |
2004.11.09 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
ITOU MASAYUKI |
分类号 |
H01L21/336;H01L21/76;H01L21/762;H01L21/763;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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