| 摘要 |
An exposure method and a method of manufacturing a semiconductor device using the exposure method are provided to eliminate problems in alignment and complexity in the design of the original mask even in the case of reducing the pattern size of the original mask pattern when projecting the original mask pattern onto a resist. An exposure method comprises the steps of: illuminating a hologram recording medium(111), in which a hologram with a first pattern is recorded by illumination with a laser beam emitted from a first laser oscillator(101), with a laser beam emitted from a second laser oscillator; and delivering the laser beam emitted from the second laser oscillator, which passes through the hologram recording medium, onto a resist, thereby forming a second pattern in the resist. The laser beam used for illuminating the resist through the hologram recording medium in which the hologram is recorded has a shorter wavelength than a wavelength of the laser beam used for recording the hologram in the hologram recording medium. The wavelength of the laser beam used for illuminating the resist is 1/(0.5 x n) (wherein n is an integer not less than 3) that of the laser beam used for recording the hologram.
|
