| 摘要 |
A method for forming a gate in a semiconductor device is provided to improve characteristics of the semiconductor device by forming an R-gate with an increased area. A polycrystal silicon layer is formed on a semiconductor substrate. Predetermined regions of the substrate and polycrystal silicon layer are isotropic-etched to form a trench. After the polycrystal silicon layer is removed, a gate oxide layer(206) and a conductive layer(208) are formed on the entire surface of the substrate having the trench, and then photolithograpic and etching process is performed on the substrate by adjusting an etching gas and bias power to form a gate.
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