发明名称 Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
摘要 By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.
申请公布号 US7259091(B2) 申请公布日期 2007.08.21
申请号 US20050112509 申请日期 2005.04.22
申请人 ADVANCED MICRO DEVICES, INC. 发明人 SCHUEHRER HOLGER;HARTIG CARSTEN;BARTSCH CHRISTIN;FROHBERG KAI
分类号 H01L21/4763 主分类号 H01L21/4763
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