发明名称 |
Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer |
摘要 |
By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.
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申请公布号 |
US7259091(B2) |
申请公布日期 |
2007.08.21 |
申请号 |
US20050112509 |
申请日期 |
2005.04.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SCHUEHRER HOLGER;HARTIG CARSTEN;BARTSCH CHRISTIN;FROHBERG KAI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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