| 摘要 |
<p>A flash memory device and its fabricating method are provided to reduce interference capacitance and increase fringing capacitance between a control gate and a floating gate by forming an isolation layer using low-k and high-k insulating layers. An active region and a field region are formed in a semiconductor substrate(11). An isolation layer(100) consisting of insulating layers having different dielectric constants is formed to bury a trench on the field region of the substrate. A floating gate consisting of first and second polycrystal silicon layers(13,17) is formed to be partially overlapped over a predetermined region of the substrate and the high-k insulating layer(16). A dielectric layer(18) and a control gate are formed on the floating gate.</p> |
