发明名称 Memory device and methods of using and making the device
摘要 A memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active low conductive layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.
申请公布号 US7259039(B2) 申请公布日期 2007.08.21
申请号 US20040818261 申请日期 2004.04.02
申请人 SPANSION LLC 发明人 LAN ZHIDA;VAN BUSKIRK MICHAEL A.;BILL COLIN
分类号 H01L51/40;G11C13/02;H01L27/24;H01L27/28;H01L51/00;H01L51/30 主分类号 H01L51/40
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