| 摘要 |
There is provided a method and apparatus for processing an organosiloxane film, which allow an inter-level insulating film with a low dielectric constant to be formed at a low heat process temperature. A semiconductor ( 10 ) with a coating film formed thereon is loaded into a reaction tube ( 2 ) of a heat-processing apparatus ( 1 ). Then, the interior of the reaction tube ( 2 ) is stabilized at a predetermined pressure, and hydrogen is supplied into an inner tube ( 3 ) through an acidic gas feed line ( 13 ), to heat the coating film under an acidic atmosphere. Then, the interior of the reaction tube ( 2 ) is heated up to a predetermined temperature, while heating the coating film under an acidic atmosphere. Then, gas inside the reaction tube ( 2 ) is exhausted, and ammonia is supplied into the inner tube ( 3 ) through an alkaline gas feed line ( 14 ), to heat the coating film under an alkaline atmosphere.
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