发明名称 |
Methods for forming a device isolation structure in a semiconductor device |
摘要 |
Methods of forming a device isolation structure in a semiconductor device are disclosed. A disclosed method comprises forming a p-type well and an n-type well in a semiconductor substrate; sequentially depositing a gate insulating layer and a gate electrode material layer; depositing a protective layer on the gate electrode material layer; removing a portion of the protective layer, a portion of the gate electrode material layer, and a portion of the gate insulating layer to expose a surface area of the semiconductor substrate; performing ion implantation and heat treatment processes to form a device isolation structure; forming a gate electrode by removing a portion of the gate electrode material layer; forming an LDD region by implanting low concentration impurity ions in the semiconductor substrate; forming a spacers on a sidewall of the gate electrode; and forming a source/drain region by implanting high concentration impurity ions.
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申请公布号 |
US7259053(B2) |
申请公布日期 |
2007.08.21 |
申请号 |
US20040946717 |
申请日期 |
2004.09.22 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM HAK DONG |
分类号 |
H01L21/8238;H01L21/76;H01L21/762 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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