SOLID STATE IMAGE SENSING DEVICE COMPRISING ANTI-REFLECTION STRUCTURE USING POLY SILICON AND METHOD FOR FABRICATING THEREOF

摘要

A solid state image pickup device including an anti-reflection structure using polysilicon is provided to easily embody an anti-reflection structure even if a material whose optical characteristic remarkably varies with a wavelength is used as a substrate by forming an anti-reflection structure made of the same material as that of the substrate. A solid state image pickup device includes a photodiode region and a transistor region. The photodiode region is composed of a semiconductor substrate(304), a first ARC(303), a second ARC(302) and an upper layer(301). The first ARC is formed on the semiconductor substrate. The second ARC is formed on the first ARC. The upper layer is formed on the second ARC. The semiconductor substrate and the second ARC are made of a first material, and the first ARC and the upper layer are made of a second material. The first material may be polysilicon, and the second material may be silicon oxide.