发明名称 High rate buffer layer for IBAD MgO coated conductors
摘要 Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
申请公布号 US7258927(B2) 申请公布日期 2007.08.21
申请号 US20040021800 申请日期 2004.12.23
申请人 LOS ALAMOS NATIONAL SECURITY, LLC 发明人 FOLTYN STEPHEN R.;JIA QUANXI;ARENDT PAUL N.
分类号 B32B15/00 主分类号 B32B15/00
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