| 摘要 |
A semiconductor device is provided to prevent a guard ring from being broken due to ESD(Electrostatic Discharge) surge by forming silicide on the guard ring. A first-conductive-type transistor is formed in a transistor region(20). The transistor region is surrounded by a first guard ring of a first impurity diffusion layer of a second conductive type, and the first guard ring is connected to a first reference potential line. The first guard ring is surrounded by a second guard ring(71) of second impurity diffusion layer of a first conductive type. A silicide region is disposed on the surface of the second guard ring such that no silicide is formed on a portion of the surface of the second guard ring on the side facing a drain region of the first conductive type transistor.
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