| 摘要 |
A plasma processing apparatus is provided to secure etching uniformity by flowing uniformly a reaction gas to an exhaust side using a round portion or a chamfered portion of an insulating member. A plasma processing apparatus includes an insulating member(116) for enclosing electrodes(114). The insulating member has the same width at corner portions of each electrode in lateral, longitudinal and orthogonal directions. A corner portion of the insulating member is rounded and is performed with a chamfering process. The corner portion of the electrode is formed like a round type structure or a chamfered type structure corresponding to the corner portion of the insulating member.
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