OPTICAL PROXIMITY CORRECTION METHOD FOR CALIBRATING PATTERN

摘要

An OPC(Optical Proximity Correction) method is provided to improve the performance of a semiconductor device by compensating the degradation of CD(Critical Dimension) in a predetermined pitch interval and preventing the fall-down of metal line patterns. A predetermined pitch interval in which a pattern is capable of being collapsed is detected(S201). A hybrid OPC is applied to the predetermined pitch interval(S202). Predetermined information is transferred to a mask manufacturing process in order to apply the information itself to the mask manufacturing process(S203). The predetermined information is pattern result information applied with the hybrid OPC.