发明名称 SEMICONDUCTOR EMITTING DEVICE WITH NANO PATTERN STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
摘要 A semiconductor light emitting device and a manufacturing method thereof are provided to reduce screw dislocation in the manufacturing process by inserting a nano pattern into a semiconductor layer. A semiconductor light emitting device includes a semiconductor layer having plural nano patterns(23), and an active layer(25) formed on the semiconductor layer. The semiconductor layer has a first semiconductor layer(22) on which the nano patterns are formed, a second semiconductor layer(24) formed on a region of the first semiconductor layer on which the nano patterns are formed, and a third semiconductor layer formed on the active layer.
申请公布号 KR20070081934(A) 申请公布日期 2007.08.20
申请号 KR20060014241 申请日期 2006.02.14
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE, JEONG WOOK;KIM, HYUN SOO;KIM, JOO SUNG;YOON, SUK HO
分类号 H01L33/10;H01L33/32;H01L33/62 主分类号 H01L33/10
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