| 摘要 |
<p>A method for fabricating a thin film transistor panel and the thin film transistor panel fabricated by the same are provided to increase exposure sensitivity by thinning a thickness of a photoresist layer, thereby improving the productivity. An amorphous silicon layer is patterned by using a photoresist pattern formed on an insulation substrate(10) an etch mask to form a semiconductor layer(44). A transparent conductive layer is formed on a gate insulating layer(30) or the photoresist pattern, and then the photoresist pattern is removed to form a pixel electrode(75). A data wiring is formed to be electrically connected to the pixel electrode. A protective layer(90) having an opening(92) exposing the pixel electrode is formed.</p> |
