| 摘要 |
A method for gap-filling a semiconductor device is provided to prevent voids in gap-filling the semiconductor device by maintaining an optimized deposition condition such as etch time, the number of etch, and a radio frequency. A first high density plasma oxide layer for gap-filling a portion of a gap is deposited(S110). A portion of the first high density plasma oxide layer is etched by using NF3 gas to make a second high density plasma oxide layer in a subsequent have a shape in gap-filling the second high density plasma oxide layer(S120). The second high density plasma oxide layer is deposited on an upper portion of the first high density plasma oxide layer(S130). The deposition and etching of the first high density plasma oxide layer and the deposition of the second high density plasma oxide layer are repeated in three times.
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