NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A non-volatile memory device and its fabricating method are provided to improve the structural stability of a contact plug for a bottom electrode by forming the contact plug using a material having perovskite structure. An interlayer dielectric(220) is formed on a semiconductor substrate, and then is patterned to form a contact hole for exposing a predetermined portion of the substrate. A contact plug is formed in the contact hole, and then a recessed contact plug for a bottom electrode is formed on the recessed contact plug. A data storage element(250) is formed in a predetermined region of the interlayer dielectric comprising the contact plug for the bottom electrode. The contact plug is formed in a material having perovskite structure.