<p>A method for measuring a pattern alignment state is provided to check exactly an alignment state distribution of the pattern formed on a semiconductor substrate by checking the substrate according to corresponding regions using an in-line SEM(Scanning Electron Microscope). A substrate is prepared(S100). The substrate includes a lower pattern and an upper pattern. The upper pattern is electrically connected with the lower pattern. An alignment state of the upper pattern is checked by using an in-line SEM on the lower pattern(S110). The lower pattern and the upper pattern are made of a conductive material.</p>
申请公布号
KR20070081511(A)
申请公布日期
2007.08.17
申请号
KR20060013439
申请日期
2006.02.13
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
GIM, JONG DEOK;JUNG, KYUNG HO;LEE, BYUNG AM;KIM, YONG WAN;PARK, YOUNG HUN;PARK, DONG JIN