| 摘要 |
An image sensor and its manufacturing method are provided to decrease an aspect ratio of the image sensor by integrating a color filter with a micro lens which removes a color filter layer and an overcoating layer. A light receiving element(115) is formed in a semiconductor substrate(100), an interlayer dielectrics(125,135,145) are formed on the substrate. Color filter lenses(180R,180G,180B) are formed on the interlayer dielectrics. The color filter lenses include a red filter lens, a green filter lens, and a blue filter lens. The color filter lens is formed in a stacked structure of different inorganic layers. The inorganic layer includes an oxide layer and a nitride layer.
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