FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A field-effect semiconductor device and its fabricating method are provided to perform normally-off operation without sacrificing their electrical characteristic. A semiconductor region(5) has main surfaces opposite to each other. A source electrode(7) and a drain electrode(8) are formed on one main surface of the semiconductor region. A first insulating member(9) is formed between the source and the drain electrodes on the main surface. A carrier storage(10) is formed on the first insulating member to accept and store carriers. A second insulating layer(11) is formed on the carrier storage. A gate electrode(12) is formed on the second insulating layer to control electric current flowing between the source and the drain electrodes.