FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to minimize a thermal budget by forming a buffer oxide layer using a catalyst auxiliary ALD(Atomic Layer Deposition) under a low temperature condition. A buffer oxide layer is formed on a semiconductor substrate(100) by using a catalyst auxiliary ALD. A doped region is formed in the semiconductor substrate by performing an ion implantation on the buffer oxide layer. The catalyst auxiliary ALD is performed in a predetermined temperature range of the room temperature to 200°C. The doped region is one selected from a group consisting of an N well region, a P well region and a channel region.