| 摘要 |
<p>1,173,150. Transistor frequency changing and gain control circuits. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 13 Dec., 1966, No. 55813/66. Heading H3T. [Also in Division H1] An insulated gate field effect transistor comprises source and drain regions of one conductivity type in a substrate of the opposite conductivity type, the channel region of the substrate having an impurity concentration which increases in the direction from drain to source; this permits close source drain spacing without giving rise to punch through. Circuits employing the transistor are described; one example (Fig. 6) comprises a mixer the input signal being applied to source electrode 11, a local oscillation to gate 14, the diffused region electrode 13 is earthed and the difference frequency is taken from drain 12. Another circuit (Fig. 7) relates to A.G.C., the input signal being applied to source 11 and the gain control signal to diffused region electrode 13, the gate 14 being earthed.</p> |
